{"id":207915,"date":"2024-10-19T13:23:47","date_gmt":"2024-10-19T13:23:47","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/astm-f616m-3\/"},"modified":"2024-10-25T06:05:55","modified_gmt":"2024-10-25T06:05:55","slug":"astm-f616m-3","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/astm\/astm-f616m-3\/","title":{"rendered":"ASTM-F616M"},"content":{"rendered":"

ASTM F616M-96-Reapproved2003<\/h3>\n

Withdrawn Standard: Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric) (Withdrawn 2009)<\/h4>\n
\n

ASTM F616M<\/h4>\n

Scope<\/strong><\/p>\n

1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.<\/p>\n

Note 1\u2014MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.<\/p>\n

1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n<\/i>-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p<\/i>-channel MOSFETs.<\/p>\n

1.3 This d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.<\/p>\n

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.<\/i><\/p>\n

Keywords<\/strong><\/p>\n

drain leakage current; leakage current; MOSFET<\/p>\n

ICS Code<\/strong><\/p>\n

ICS Number Code n\/a<\/p>\n

DOI:<\/strong> 10.1520\/F0616M-96R03<\/p>\n<\/div>\n

PDF Catalog<\/h4>\n\n\n\n\n\n
PDF Pages<\/th>\nPDF Title<\/th>\n<\/tr>\n
1<\/td>\nScope
Referenced Documents
Terminology
Summary of Test Method
Significance and Use
Interferences <\/td>\n<\/tr>\n
2<\/td>\nApparatus
Sampling
Procedure
FIG. 1 <\/td>\n<\/tr>\n
3<\/td>\nReport
Precision and Bias
Keywords
TABLE 1 <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric) (Withdrawn 2009)<\/b><\/p>\n\n\n\n\n
Published By<\/td>\nPublication Date<\/td>\nNumber of Pages<\/td>\n<\/tr>\n
ASTM<\/b><\/a><\/td>\n2003<\/td>\n3<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"featured_media":207918,"template":"","meta":{"rank_math_lock_modified_date":false,"ep_exclude_from_search":false},"product_cat":[2637],"product_tag":[],"class_list":{"0":"post-207915","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-astm","8":"first","9":"instock","10":"sold-individually","11":"shipping-taxable","12":"purchasable","13":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product\/207915","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/types\/product"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media\/207918"}],"wp:attachment":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media?parent=207915"}],"wp:term":[{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_cat?post=207915"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_tag?post=207915"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}