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BSI PD IEC/TR 62240-1:2018 – TC:2020 Edition

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Tracked Changes. Process management for avionics. Electronic components capability in operation – Temperature uprating

Published By Publication Date Number of Pages
BSI 2020 118
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IEC TR 62240-1:2018 is available as /2 which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC TR 62240-1:2018 is a technical report, which provides information when using semiconductor devices in wider temperature ranges than those specified by the device manufacturer. The uprating solutions described herein are considered exceptions, when no reasonable alternatives are available; otherwise devices are utilized within the manufacturers’ specifications. This document describes the methods and processes for implementing this special case of thermal uprating. All of the elements of these methods and processes employ existing, commonly used best engineering practices. No new or unique engineering knowledge is needed to follow these processes, only a rigorous application of the overall approach. The terms “uprating” and “thermal uprating” are being used increasingly in avionics industry discussions and meetings, and clear definitions are included in the present IEC Technical Report. They were coined as shorthand references to a special case of methods commonly used in selecting electronic components for circuit design. This new edition cancels and replaces the first edition published in 2013 and includes a revised wording for subclause 4.1 (Introduction to selection provisions) and the associated flowchart.

PDF Catalog

PDF Pages PDF Title
62 undefined
64 CONTENTS
67 FOREWORD
69 INTRODUCTION
70 1 Scope
2 Normative references
3 Terms, definitions and abbreviated terms
3.1 Terms and definitions
74 3.2 Abbreviated terms
4 Selection provisions
4.1 General
75 Figures
Figure 1 – Flow chart for semiconductor devices over wider temperature ranges
76 4.2 Device selection, usage and alternatives
4.2.1 General
4.2.2 Alternatives
4.2.3 Device technology
77 4.2.4 Compliance with the electronic component management plan
4.3 Device capability assessment
4.3.1 General
4.3.2 Device package and internal construction capability assessment
4.3.3 Risk assessment (assembly level)
78 4.3.4 Device uprating methods
79 4.3.5 Device reliability assurance
80 4.4 Device quality assurance (QA) over wider temperature ranges
4.4.1 Decision for the optimum QA method
81 4.4.2 Device level testing
4.4.3 Higher level assembly testing
4.5.1 General
4.5.2 Semiconductor device change monitoring
82 4.6 Final electronic equipment assurance
4.7 Documentation and identification
4.7.1 Documentation
4.7.2 Device identification
4.7.3 Customer notification
83 Figure 2 – Report form for documenting device usage over wider temperature ranges
84 Annexes
Annex A (informative) Device parameter re-characterisation
A.1 Glossary of symbols
85 A.2 Rationale for parameter re-characterisation
A.2.1 General
A.2.2 Assessment for uprateability
Figure A.1 – Parameter re-characterisation
86 A.3 Capability assurance
A.3.1 Description
A.3.2 Parameter re-characterisation process
87 Figure A.2 – Flow diagram of parameter re-characterisation capability assurance process
88 Tables
Table A.1 – Example of sample size calculation
90 Figure A.3 – Margin in electrical parameter measurement based on the results of the sample test
91 A.3.3 Application capability assessment
Figure A.4 – Schematic diagram of parameter limit modifications
Table A.2 – Parameter re-characterisation example: SN74ALS244 octal buffer/driver
92 A.4 Quality assurance
A.5 Factors to be considered in parameter re-characterisation
Figure A.5 – Parameter re-characterisation device quality assurance
93 Figure A.6 – Schematic of outlier products that can invalidate sample testing
94 A.6 Report form for documenting device parameter re-characterisation
Figure A.7 – Example of intermediate peak of an electrical parameter: Voltage feedback input threshold change for Motorola MC34261 power factor controller, see [4]
95 Figure A.8 – Report form for documenting device parameter re-characterisation
96 Annex B (informative) Stress balancing
B.1 General
B.2 Glossary of symbols
B.3 Stress balancing
B.3.1 General
97 B.3.2 Determine the ambient temperature extremes
B.3.3 Determine parameter relationship to power dissipation
B.3.4 Determine the dissipated power versus ambient temperature relationship
98 Figure B.1 – Iso-TJ curve: Relationship between ambient temperature and dissipated power
99 B.3.5 Assess applicability of the method
B.3.6 Determine the new parameter values
100 B.3.7 Conduct parametric and functional tests
B.4 Application example
B.4.1 General
Figure B.2 – Graph of electrical parameters versus dissipated power
101 B.4.2 Determine the ambient temperature extremes
B.4.3 Select the parameters that can be derated
102 B.4.4 Construct an Iso-TJ plot
B.4.5 Determine whether or not the device can be uprated
B.4.6 Determine the new parameter values
Figure B.3 – Iso-TJ curve for the Fairchild MM74HC244
103 B.4.7 Conduct parametric and functional tests
B.5 Other notes
B.5.1 Margins
B.5.2 Cautions and limitations
Figure B.4 – Power versus frequency curve for the Fairchild MM74HC244
104 Figure B.5 – Flow chart for stress balancing
105 Figure B.6 – Report form for documenting stress balancing
106 Annex C (informative) Parameter conformance assessment
C.1 General
C.2 Test plan
C.2.1 General
C.2.2 Critical parameters
C.2.3 Minimum allowable test margins
107 C.2.4 Test options
Figure C.1 – Relationship of temperature ratings, requirements and margins
109 Figure C.2 – Typical fallout distribution versus Treq-max
110 C.2.5 Quality assurance
111 Figure C.3 – Parameter conformance assessment flow
112 Figure C.4 – Report form for documenting parameter conformance testing
113 Annex D (informative) Higher assembly level testing
D.1 General
D.2 Process
D.2.1 General
D.2.2 Analysis of assembly test definition
D.2.3 Perform assembly test
114 D.2.4 Document results
D.2.5 Maintenance notification
Figure D.1 – Flow chart of higher level assembly testing
115 Figure D.2 – Report form for documenting higherlevel assembly test at temperature extremes
116 Bibliography
BSI PD IEC/TR 62240-1:2018 - TC
$258.95