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BSI 23/30451650 DC:2023 Edition

BSI 23/30451650 DC:2023 Edition

$24.66

BS EN IEC 60747-6. Semiconductor devices – Part 6. Discrete devices. Thyristors

Published By Publication Date Number of Pages
BSI 2023 126
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PDF Catalog

PDF Pages PDF Title
9 FOREWORD
11 1 Scope
2 Normative references
3 Terms and definitions
27 4 Letter symbols
4.1 General
4.2 Additional general subscripts
29 4.3 List of letter symbols
31 5 Essential ratings and characteristics (properties)
5.1 General
5.2 Ratings (limiting values)
5.2.1 Storage temperature (Tstg)
5.2.2 Operating ambient, case, heatsink or junction temperature (Ta, Tc, Ts or Tvj)
32 5.2.3 Principle anode-cathode voltages
5.2.3.1 Non-repetitive peak off-state voltage (VDSM)
5.2.3.2 Repetitive peak off-state voltage (VDRM)
5.2.3.3 Peak working off-state voltage (VDWM)
5.2.3.4 Peak working reverse voltage (VRWM)
5.2.3.5 Non-repetitive peak reverse voltage (VRSM)
5.2.3.6 Repetitive peak reverse voltage (VRRM)
5.2.3.7 Continuous (direct) reverse voltage (VR) (where appropriate)
5.2.3.8 Continuous (direct) off-state voltage (VD) (where appropriate)
5.2.4 Principal anode-cathode currents
5.2.4.1 Mean on-state current (IT(AV))
5.2.4.2 RMS on-state current (IT(RMS))
33 5.2.4.3 Continuous (direct) on-state current
5.2.4.4 Non-repetitive surge on-state current (ITSM)
5.2.4.5 I2t value (of surge on-state current) (I2t)
5.2.4.6 Repetitive peak on-state current (ITRM) (where appropriate)
5.2.4.6.1 Repetitive peak sinusoidal on-state current (where appropriate)
34 5.2.4.6.2 Repetitive peak trapezoidal on-state current (where appropriate)
36 5.2.4.7 Overload on-state current (IT(OV))
5.2.4.8 Critical rate of rise of on-state current (diT/dt(cr))
37 5.2.4.9 Peak reverse current (IRCM) (for reverse conducting thyristor)
5.2.4.10 Mean reverse current (IRC(AV)) (for reverse conducting thyristor)
5.2.4.11 Continuous (direct) reverse current (IRC) (for reverse conducting thyristor)
5.2.4.12 Non-repetitive surge reverse current (IRCSM) (for reverse conducting thyristor)
5.2.4.13 Non-repetitive peak controllable on-state current (ITQSM) for GTO
5.2.4.14 Repetitive peak controllable on-state current (ITQRM) for GTO
5.2.4.15 Short-time and intermittent duty current (for GTO)
5.2.4.16 Peak case non-rupture current (IRSMC) (where appropriate)
38 5.2.5 Gate voltages, current and power dissipation
5.2.5.1 Gate voltages
5.2.5.1.1 General
5.2.5.1.2 Peak forward gate voltage (VFGM)
5.2.5.1.3 Peak reverse gate voltage (VRGM)
5.2.5.2 Peak forward gate current (IFGM)
5.2.5.3 Gate power dissipation
5.2.5.3.1 General
5.2.5.3.2 Mean gate power
5.2.5.3.3 Peak gate power dissipation (PGM)
5.2.5.3.4 Peak forward gate power (PFGM) for GTO
5.2.6 Total power dissipation (Ptot)
5.2.7 Frequency ratings
39 5.2.8 Special requirements for mounting
5.2.8.1 Mounting torque (M) (where appropriate)
5.2.8.2 Clamping force (F) (where appropriate)
5.3 Characteristics (properties)
5.3.1 General
5.3.2 On-state voltages
5.3.2.1 Continuous (direct) on-state voltage
5.3.2.2 Peak on-state voltage (VTM)
5.3.3 On-state characteristics (where appropriate)
5.3.3.1 General
5.3.3.2 Threshold voltage (VT(TO) or VTO)
5.3.3.3 On-state slope resistance (rT)
40 5.3.4 Holding current (IH)
5.3.5 Latching current (IL)
5.3.6 Reverse current (IR)
5.3.7 Repetitive peak reverse current (IRRM)
5.3.8 Continuous (direct) off-state current (ID)
5.3.9 Repetitive peak off-state current (IDRM)
5.3.10 Gate trigger current (IGT) and gate trigger voltage (VGT)
41 5.3.11 Gate non-trigger current (IGD) and gate non-trigger voltage (VGD)
5.3.12 Sustaining gate current (IFGsus) (for GTO only)
5.3.13 Peak turn-off gate current (IRGQM) (for GTO only)
42 5.3.14 Peak tail current (IZM) (for GTO only)
5.3.15 Characteristic time intervals
5.3.15.1 Turn-on delay time (tgd)
5.3.15.2 Circuit commutated turn-off time (tq)
43 5.3.15.3 Critical rate of rise of off-state voltage (dv/dt(cr))
5.3.15.4 Critical rate of rise of commutating voltage (dv(com)/dt) (for triac)
5.3.15.5 Turn-off time intervals for GTO
44 5.3.16 Reverse conducting voltage (VRC) (for reverse conducting thyristor)
5.3.17 Power and energy dissipation
5.3.17.1 General
5.3.17.2 Total energy dissipation during one half sinusoidal on-state current pulse (Ep) (where appropriate)
45 5.3.17.3 Total energy dissipation during one trapezoidal on-state current pulse (Ep) (where appropriate)
5.3.17.4 Turn-on energy dissipation (EON) for GTO preferably
5.3.17.5 On-state energy dissipation (ET) for GTO preferably
46 5.3.17.6 Turn-off energy dissipation (EQ) for GTO preferably
5.3.18 Reverse recovery characteristics (where appropriate)
5.3.18.1 Recovered charge (Qr) (where appropriate)
5.3.18.2 Peak reverse recovery current (Irrm)(where appropriate)
5.3.18.3 Reverse recovery time (trr) (where appropriate)
47 5.3.19 Thermal resistance
5.3.19.1 Thermal resistance junction to ambient (Rth(j-a))
5.3.19.2 Thermal resistance junction to case (Rth(j-c))
5.3.19.3 Thermal resistance case to heatsink (Rth(c-s))
5.3.19.4 Thermal resistance junction to heatsink (Rth(j-s))
5.3.20 Transient thermal impedance
5.3.20.1 Transient thermal impedance junction to ambient (Zth(j-a))
5.3.20.2 Transient thermal impedance junction to case (Zth(j-c))
5.3.20.3 Transient thermal impedance junction to heatsink (Zth(j-s))
6 Measuring and test methods
6.1 General
6.2 Measuring methods for electrical characteristics
6.2.1 On-state voltage
6.2.1.1 DC method (for low current thyristors)
48 6.2.1.2 Oscilloscope method
49 6.2.1.3 Pulse method
50 6.2.2 Repetitive peak reverse current (IRRM)
6.2.2.1 Oscilloscope method
51 6.2.2.2 Pulse method
6.2.3 Latching current (IL)
53 6.2.4 Holding current (IH)
54 6.2.5 Off-state current (ID)
55 6.2.6 Repetitive peak off-state current (IDRM)
6.2.6.1 Oscilloscope method
56 6.2.6.2 Pulse method
6.2.7 Gate trigger current (IGT) or gate trigger voltage (VGT)
57 6.2.8 Gate non-trigger voltage (VGD) and gate non-trigger current (IGD)
58 6.2.9 Turn-on delay time (td) and turn-on time (tgt)
61 6.2.10 Circuit commutated turn-off time (tq)
63 6.2.11 Critical rate of rise of off-state voltage (dv/dt(cr))
66 6.2.12 Critical rate of rise of commutating voltage of triacs (dv(com)/dt)
6.2.12.1 Method 1: for low current triacs
68 6.2.12.2 Method 2: for high current triacs
71 6.2.13 Recovered charge (Qr) and reverse recovery time (trr)
6.2.13.1 Half sinusoidal waveform method
73 6.2.13.2 Rectangular waveform method
75 6.2.14 Circuit commutated turn-off time (tq) of reverse conducting thyristor
77 6.2.15 Turn off behaviour of GTO
80 6.2.16 Total energy dissipation in a whole period of cycle (for fast switching thyristor)
6.3 Measuring methods for thermal properties
6.3.1 General
81 6.3.2 Measurement of the case temperature
6.3.3 Measuring methods for thermal resistance (Rth) and transient thermal impedance (Zth)
6.3.3.1 Methods using temperature-sensitive characteristic of thyristor as an indicator of the junction temperature
6.3.3.2 Measurement by means of a heat flow
6.3.4 Measurement for thermal resistance and transient thermal impedance (Method A)
6.3.4.1 Thermal resistance (Rth)
83 6.3.4.2 Transient thermal impedance (Zth)
84 6.3.5 Measurement for thermal resistance and transient thermal impedance (Method B)
6.3.5.1 Principles of the measurement
90 6.3.5.2 Thermal resistance (Rth)
93 6.3.5.3 Transient thermal impedance (Zth(t))
95 6.3.6 Measurement for thermal resistance and transient thermal impedance (Method C, for GTO only)
6.3.6.1 Calibration curve
96 6.3.6.2 Thermal resistance (Rth)
98 6.3.6.3 Transient thermal impedance (Zth(t))
99 6.3.7 Measurement for thermal resistance (Method D)
102 6.4 Test methods for verification of ratings (limiting values)
6.4.1 Non-repetitive peak reverse voltage (VRSM)
103 6.4.2 Non-repetitive peak off-state voltage (VDSM)
104 6.4.3 Non-repetitive surge on-state current (ITSM)
106 6.4.4 On-state current ratings of fast switching thyristor
6.4.4.1 Purpose
107 6.4.4.2 Sinusoidal on-state current with reverse voltage applied
110 6.4.4.3 Sinusoidal on-state current with reverse voltage suppressed
113 6.4.4.4 Trapezoidal on-state current with reverse voltage applied
115 6.4.4.5 Trapezoidal on-state current with reverse voltage suppressed
118 6.4.5 Critical rate of rise of on-state current (di/dt(cr))
120 6.4.6 Peak case non-rupture current (IRSMC)
122 7 Requirements for type tests and routine tests, endurance tests and marking
7.1 Type tests
123 7.2 Routine tests
7.3 Measuring and test methods
7.4 Marking of thyristors
7.5 Endurance tests
7.5.1 General
7.5.2 List of endurance tests
7.5.3 Conditions for endurance tests
125 7.5.4 Acceptance-defining characteristics and acceptance criteria for endurance tests
7.5.5 Acceptance-defining characteristics and acceptance criteria for reliability tests
126 Bibliography

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