🔥🔥 Don’t Miss Out on Our End of Autumn Sale. If you have any questions, feel free to click the bottom right corner to contact our customer service..

Concat us[email protected]
Shopping Cart

No products in the cart.

🔍
BS IEC 63284:2022

BS IEC 63284:2022

$102.76

Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors

Published By Publication Date Number of Pages
BSI 2022 16
PDF Format Searchable Printable Preview Now
Guaranteed Safe Checkout
Categories: ,

If you have any questions, feel free to reach out to our online customer service team by clicking on the bottom right corner. We’re here to assist you 24/7.
Email:[email protected]

PDF Catalog

PDF Pages PDF Title
2 undefined
3 English
CONTENTS
4 FOREWORD
6 INTRODUCTION
7 1 Scope
2 Normative references
3 Terms and definitions
8 4 Objectives
5 Applicable GaN transistors
6 Dynamic high temperature operating life test
6.1 Test sample
6.2 Test circuit
6.2.1 Scheme of a hard switching circuit
6.2.2 Electrical parameters
Figure 1 – Test circuit
9 6.2.3 Diode
6.2.4 Gate driver
6.2.5 Inductance and resistance
10 6.3 Test condition
6.3.1 General
Figure 2 – Wave forms of switching
Figure 3 – Switching locus at hard switching
11 6.3.2 Electrical stress
6.3.3 Thermal stress
6.4 Test procedure
6.4.1 Flow chart
12 6.4.2 Initial measurement
6.4.3 Intermediate measurement
Figure 4 – Test flow chart
13 6.5 Failure criteria
6.6 Failure mechanism
6.7 Acceleration parameters
6.8 Number of samples
6.9 Test report
14 Bibliography

Related products

BS IEC 63284:2022
$102.76