BS EN 62374-1:2010:2011 Edition

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Semiconductor devices – Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

Published By	Publication Date	Number of Pages
BSI	2011	20

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Categories: 43.040.20 - Lighting, signalling and warning devices, BSI

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Description

This part of IEC 62374 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

Additional information

Status	Definitive
Pages	20
Publication Date	2011-06-30
ISBN	978 0 580 75206 3
Standard Number	BS EN 62374-1:2010
Title	Semiconductor devices – Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
Identical National Standard Of	EN 62374-1:2010/AC:2011, IEC 60809:2014/AMD1:2017
Corrects	BS EN 62374-1:2010
Descriptors	Electrical measurement, Semiconductors, Dielectric breakdown, Life (durability), Testing conditions, Semiconductor devices, Films (states of matter)
Publisher	BSI
Committee	EPL/47
ICS Codes	43.040.20 - Lighting, signalling and warning devices

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BS EN 62374-1:2010:2011 Edition

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