BS EN 60747-16-5:2013
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Semiconductor devices – Microwave integrated circuits. Oscillators
Published By | Publication Date | Number of Pages |
BSI | 2013 | 42 |
IEC 60747-16-5:2013 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit oscillators. This standard is applicable to the fixed and voltage-controlled semiconductor microwave oscillator devices, except the oscillator modules such as synthesizers which require external controllers.
PDF Catalog
PDF Pages | PDF Title |
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6 | English CONTENTS |
10 | 1 Scope 2 Normative references 3 Terms and definitions |
13 | 4 Essential ratings and characteristics 4.1 General requirements 4.1.1 Circuit identification and types 4.1.2 General function description 4.1.3 Manufacturing technology 4.1.4 Package identification 4.2 Application description 4.2.1 Conformance to system and/or interface information 4.2.2 Overall block diagram 4.2.3 Reference data |
14 | 4.2.4 Electrical compatibility 4.2.5 Associated devices 4.3 Specification of the function 4.3.1 Detailed block diagram – Functional blocks 4.3.2 Identification and function of terminals |
15 | 4.3.3 Function description 4.4 Limiting values (absolute maximum rating system) 4.4.1 Requirements |
16 | 4.4.2 Electrical limiting values 4.4.3 Temperatures |
17 | 4.5 Operating conditions (within the specified operating temperature range) 4.6 Electrical characteristics |
18 | 4.7 Mechanical and environmental ratings, characteristics and data 4.8 Additional information 5 Measuring methods 5.1 General 5.1.1 General precautions |
19 | 5.1.2 Characteristic impedance 5.1.3 Handling precautions 5.1.4 Types 5.2 Oscillation frequency (fosc) 5.2.1 Purpose 5.2.2 Circuit diagram 5.2.3 Principle of measurement 5.2.4 Circuit description and requirements 5.2.5 Precautions to be observed Figures Figure 1 – Circuit diagram for the measurement of the oscillation frequency fosc |
20 | 5.2.6 Measurement procedure 5.2.7 Specified conditions 5.3 Output power (Po,osc) 5.3.1 Purpose 5.3.2 Circuit diagram 5.3.3 Principle of measurement 5.3.4 Circuit description and requirements 5.3.5 Precautions to be observed 5.3.6 Measurement procedure 5.3.7 Specified conditions |
21 | 5.4 Phase noise (L (f)) 5.4.1 Purpose 5.4.2 Measuring methods Tables Table 1 – Comparison of phase noise measuring methods |
22 | Figure 2 – Circuit diagram for the measurement of the phase noise L (f) (method 1) |
23 | Figure 3 – Circuit diagram for the measurement of the phase noise L (f) (method 2) |
24 | Figure 4 – Circuit diagram for the measurement of the phase noise L (f) (method 3) |
26 | 5.5 Tuning sensitivity (Sf,v) 5.5.1 Purpose 5.5.2 Circuit diagram 5.5.3 Principle of measurement 5.5.4 Circuit description and requirements 5.5.5 Precautions to be observed 5.5.6 Measurement procedure 5.5.7 Specified conditions 5.6 Frequency pushing (fosc, push) 5.6.1 Purpose |
27 | 5.6.2 Circuit diagram 5.6.3 Principle of measurement 5.6.4 Circuit description and requirements 5.6.5 Precautions to be observed 5.6.6 Measurement procedure 5.6.7 Specified conditions 5.7 Frequency pulling (fosc, pull) 5.7.1 Purpose 5.7.2 Circuit diagram |
28 | 5.7.3 Principle of measurement 5.7.4 Circuit description and requirements 5.7.5 Precautions to be observed 5.7.6 Measurement procedure Figure 5 – Circuit diagram for the measurement of the frequency pulling fosc, pull |
29 | 5.7.7 Specified conditions 5.8 n-th order harmonic distortion ratio (Pnth/P1) 5.8.1 Purpose 5.8.2 Circuit diagram 5.8.3 Principle of measurement 5.8.4 Circuit description and requirements 5.8.5 Measurement procedure 5.8.6 Specified conditions |
30 | 5.9 Output power flatness (ΔPo,osc) 5.9.1 Purpose 5.9.2 Circuit diagram 5.9.3 Principle of measurement 5.9.4 Circuit description and requirements 5.9.5 Precautions to be observed 5.9.6 Measurement procedure 5.9.7 Specified conditions 5.10 Tuning linearity 5.10.1 Purpose 5.10.2 Circuit diagram |
31 | 5.10.3 Principle of measurement 5.10.4 Circuit description and requirements 5.10.5 Precautions to be observed 5.10.6 Measurement procedure Figure 6 – Tuning linearity |
32 | 5.10.7 Specified conditions 5.11 Frequency temperature coefficient (α f,temp) 5.11.1 Purpose 5.11.2 Circuit diagram 5.11.3 Principle of measurement Figure 7 – Circuit diagram for the measurement of the oscillationfrequency temperature coefficient α f,temp |
33 | 5.11.4 Circuit description and requirements 5.11.5 Precautions to be observed 5.11.6 Measurement procedure 5.11.7 Specified conditions 5.12 Output power temperature coefficient (αP,temp) 5.12.1 Purpose 5.12.2 Circuit diagram 5.12.3 Principle of measurement |
34 | 5.12.4 Circuit description and requirements 5.12.5 Precautions to be observed 5.12.6 Measurement procedure 5.12.7 Specified conditions 5.13 Spurious distortion ratio (Ps/P1) 5.13.1 Purpose 5.13.2 Circuit diagram 5.13.3 Principle of measurement |
35 | 5.13.4 Circuit description and requirements 5.13.5 Measurement procedure 5.13.6 Specified conditions 5.14 Modulation bandwidth (Bmod) 5.14.1 Purpose 5.14.2 Circuit diagram |
36 | 5.14.3 Principle of measurement 5.14.4 Circuit description and requirements 5.14.5 Precautions to be observed 5.14.6 Measurement procedure Figure 8 – Circuit diagram for the measurement of the modulation bandwidth Bmod |
37 | 5.14.7 Specified conditions 5.15 Sensitivity flatness 5.15.1 Purpose 5.15.2 Circuit diagram 5.15.3 Principle of measurement |
38 | 5.15.4 Circuit description and requirements 5.15.5 Precautions to be observed 5.15.6 Measurement procedure 5.15.7 Specified conditions 6 Verifying methods 6.1 Load mismatch tolerance (ΨL) 6.1.1 Purpose 6.1.2 Verifying method 1 (spurious intensity) Figure 9 – Sensitivity flatness |
39 | 6.1.3 Verifying method 2 (no discontinuity of frequency tuning characteristics of VCO) |
40 | 6.2 Load mismatch ruggedness (ΨR) 6.2.1 Purpose 6.2.2 Circuit diagram 6.2.3 Circuit description and requirements 6.2.4 Precautions to be observed 6.2.5 Test Procedure |
41 | 6.2.6 Specified conditions |
42 | Bibliography |